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ElecSuper FDN337N(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
FDN337N(ES)
LCSC Part #
C53199112
Packaging
SOT-23
Customer #
Key Attributes
1.4W 30V 5.8A 1V 21mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper FDN337N(ES)
In-Stock: 3,000
3,000 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0409$ 0.41
100+$ 0.0326$ 3.26
300+$ 0.0284$ 8.52
3,000+$ 0.0253$ 75.90
6,000+$ 0.0228$ 136.80
9,000+$ 0.0216$ 194.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Output Capacitance(Coss)62pF
Pd - Power Dissipation1.4W
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
Gate Charge(Qg)6.7nC
Vgs±12V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

FDN337N(ES) is an N-channel enhancement-mode MOSFET. The device employs advanced trench technology and design to deliver superior on-resistance at low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. The standard product FDN337N(ES) is lead-free.

Features

AI Translation
  • 30V, RDS(ON) = 21mΩ (typ.) @ VGS = 10V
  • RDS(ON) = 25mΩ (typ.) @ VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low on-resistance
  • Material: Halogen-free
  • Reliable and robust
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Portable/desktop computer power management
  • DC-DC conversion