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HXY MOSFET IMW65R027M1HXKSA1-HXY product image
  • IMW65R027M1HXKSA1-HXY thumbnail 1
  • IMW65R027M1HXKSA1-HXY thumbnail 2
  • IMW65R027M1HXKSA1-HXY thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
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HXY MOSFET IMW65R027M1HXKSA1-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IMW65R027M1HXKSA1-HXY
LCSC Part #
C53133792
Packaging
TO-247
Customer #
Key Attributes
650V 99A 3V 333W 38mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IMW65R027M1HXKSA1-HXY

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-247
Configuration-
Drain to Source Voltage650V
Current - Continuous Drain(Id)99A
Output Capacitance(Coss)173pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation333W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)38mΩ
Number1 N-channel
Input Capacitance(Ciss)2.543nF
Gate Charge(Qg)74.5nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece
In-Stock: 10
10 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 10.6664$ 8.5332$ 8.53
10+$ 9.2036$ 7.3629$ 73.63
30+$ 8.3104$ 6.6484$ 199.45
90+$ 7.5631$ 6.0505$ 544.55
Standard Packaging30/Full Tube
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