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JSMSEMI PUMD9,115-JSM product image
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JSMSEMI PUMD9,115-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
PUMD9,115-JSM
LCSC Part #
C53114101
Packaging
SOT-363
Customer #
Key Attributes
50V 140 100mA 385mW NPN+PNP 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-363 Single, Pre-Biased Bipolar Transistors RoHS
Datasheetpdf iconJSMSEMI PUMD9,115-JSM
In-Stock: 5,780
5,780 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0491$ 0.49
100+$ 0.0392$ 3.92
300+$ 0.0342$ 10.26
3,000+$ 0.0304$ 91.20
6,000+$ 0.0274$ 164.40
9,000+$ 0.0259$ 233.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
ManufacturerJSMSEMI
PackagingSOT-363
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)-
Emitter-Base Voltage VEBO-
DC Current Gain140
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV@10mA,0.3mA
Output Voltage(VO(on))-
Input Resistor13kΩ
Resistor Ratio0.25
Pd - Power Dissipation385mW
Input Voltage (VI(on)@Ic,Vce)-
Voltage - Input(Max)(VI(off))-
typeNPN+PNP
Number1 NPN Pre-Biased, 1 PNP Pre-Biased

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network comprising two resistors — a series base resistor and a base-emitter resistor. These digital transistors are designed to replace discrete devices and their external resistor bias networks. The BRT eliminates these components by integrating them into a single device. In the PUMD9,115-JSM, two complementary BRT devices are packaged in an SOT 363 package, making it ideal for low-power SMT applications where board space is limited.

Features

AI Translation
  • Simplified circuit design
  • Reduced PCB space
  • Reduced component count
  • We declare that product materials comply with RoHS requirements.