JSMSEMI PDTC123JT,215-JSM

Manufacturer	JSMSEMIAsian Brands
MPN	PDTC123JT,215-JSM
LCSC Part #	C53114078
Packaging	SOT-23
Customer #
Key Attributes	50V 80 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-23 Single, Pre-Biased Bipolar Transistors RoHS
Datasheet	JSMSEMI PDTC123JT,215-JSM

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Manufacturer	JSMSEMI
Packaging	SOT-23
Current - Collector Cutoff	100nA
Collector - Emitter Voltage VCEO	50V
Transition frequency(fT)	-
Emitter-Base Voltage VEBO	-
DC Current Gain	80
Current - Collector(Ic)	100mA
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	250mV
Output Voltage(VO(on))	-
Input Resistor	28.6kΩ
Resistor Ratio	-
Pd - Power Dissipation	200mW
Input Voltage (VI(on)@Ic,Vce)	-
Voltage - Input(Max)(VI(off))	-
Number	1 NPN (Pre-Biased)
type	NPN

In-Stock: 3,000

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Qty	Unit Price	Total Amount
20+	$ 0.0298	$ 0.60
200+	$ 0.0234	$ 4.68
600+	$ 0.0198	$ 11.88
3,000+	$ 0.0177	$ 53.10
9,000+	$ 0.0158	$ 142.20
21,000+	$ 0.0148	$ 310.80
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
Manufacturer	JSMSEMI
Packaging	SOT-23
Current - Collector Cutoff	100nA
Collector - Emitter Voltage VCEO	50V
Transition frequency(fT)	-
Emitter-Base Voltage VEBO	-
DC Current Gain	80
Current - Collector(Ic)	100mA
Operating Temperature	-55℃~+150℃
Vce Saturation(VCE(sat))	250mV
Output Voltage(VO(on))	-
Input Resistor	28.6kΩ
Resistor Ratio	-
Pd - Power Dissipation	200mW
Input Voltage (VI(on)@Ic,Vce)	-
Voltage - Input(Max)(VI(off))	-
Number	1 NPN (Pre-Biased)
type	NPN