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JSMSEMI 2N7002BKS,115-JSM product image
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JSMSEMI 2N7002BKS,115-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
2N7002BKS,115-JSM
LCSC Part #
C53114003
Packaging
SOT-363
Customer #
Key Attributes
150mW 60V 340mA 1.6V 2Ω@10V 2 N-Channel N-Channel SOT-363 Single FETs, MOSFETs RoHS
Datasheetpdf iconJSMSEMI 2N7002BKS,115-JSM
In-Stock: 920
920 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0366$ 0.73
200+$ 0.0287$ 5.74
600+$ 0.0243$ 14.58
3,000+$ 0.0217$ 65.10
9,000+$ 0.0194$ 174.60
21,000+$ 0.0182$ 382.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-363
Output Capacitance(Coss)30pF
Pd - Power Dissipation150mW
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)340mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)2Ω@10V
Number2 N-Channel
Input Capacitance(Ciss)40pF
Gate Charge(Qg)-
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

2N7002BKS,115-JSM is a dual N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent on-resistance and low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits.

Features

AI Translation
  • High-density cell design for low on-resistance
  • Voltage-controlled small-signal switch
  • Robust and reliable
  • High saturation current capability
  • ESD protection

Applications

AI Translation
  • Portable device load switch
  • DC/DC converter