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JSMSEMI PESD18VF1BLYL-JSM product image
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JSMSEMI PESD18VF1BLYL-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
PESD18VF1BLYL-JSM
LCSC Part #
C53113989
Packaging
DFN1006-2
Customer #
Key Attributes
32V 1A@8/20us 32W@8/20us 23V 18V DFN1006-2 TVS Diodes RoHS
Datasheetpdf iconJSMSEMI PESD18VF1BLYL-JSM
In-Stock: 9,870
9,870 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0529$ 0.53
100+$ 0.0421$ 4.21
300+$ 0.0368$ 11.04
1,000+$ 0.0327$ 32.70
5,000+$ 0.0295$ 147.50
10,000+$ 0.0279$ 279.00
Standard Packaging10000/Full Reel
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerJSMSEMI
PackagingDFN1006-2
Clamping Voltage32V
Operating Temperature-55℃~+150℃
Peak Pulse Current (Ipp)1A@8/20us
Peak Pulse Power Dissipation (Ppp)32W@8/20us
Number of Channels1
Voltage - Breakdown23V
typeESD
Reverse Leakage Current (Ir)100nA
Polarity-
Reverse Stand-Off Voltage (Vrwm)18V
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

PESD18VF1BLYL-JSM is an ESD diode with 32W (8/20μs) peak pulse power, designed to protect a single high-speed data line. It features low-capacitance ESD protection in a DFN1006-2 package. The product is RoHS compliant with matte tin-plated leads (lead-free), meeting IEC61000-4-2 Level 4 ESD protection requirements.

Features

AI Translation
  • Ultra-low capacitance: typical 0.25 - 0.45pF (VR = 0V, f = 1MHz)
  • Low leakage current: 0.1μA max at VRWM = 5V
  • Reverse working peak voltage: 18V
  • Protection for a single high-speed data line
  • Low clamping voltage: 27 - 32V at IPP = 1A (8/20μs)
  • Compliant with IEC61000-4-2 (ESD) immunity test: contact discharge > 8kV; air discharge > 15kV
  • RoHS compliant
  • 32W (8/20μs) peak pulse power

Applications

AI Translation
  • Communication systems
  • Portable instruments
  • Audio and video equipment
  • Computers and peripherals
  • USB 2.0, USB 3.0 ports