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JSMSEMI BSS138PS,115-JSM product image
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JSMSEMI BSS138PS,115-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
BSS138PS,115-JSM
LCSC Part #
C53113955
Packaging
SOT-363
Customer #
Key Attributes
150mW 50V 300mA 1.2V 1.9Ω@10V 2 N-Channel N-Channel SOT-363 Single FETs, MOSFETs RoHS
Datasheetpdf iconJSMSEMI BSS138PS,115-JSM
In-Stock: 2,980
2,980 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0326$ 0.65
200+$ 0.0256$ 5.12
600+$ 0.0217$ 13.02
3,000+$ 0.0193$ 57.90
9,000+$ 0.0173$ 155.70
21,000+$ 0.0162$ 340.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-363
Output Capacitance(Coss)12.9pF
Pd - Power Dissipation150mW
Configuration-
Drain to Source Voltage50V
Current - Continuous Drain(Id)300mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.2V
RDS(on)1.9Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5.9pF
Number2 N-Channel
Input Capacitance(Ciss)26.5pF
Gate Charge(Qg)-
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS138PS,115-JSM is a dual N-channel enhancement-mode MOSFET. It employs advanced trench technology and design to achieve excellent low on-resistance and low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. Package: SOT-363.

Features

AI Translation
  • High-density cell design for extremely low on-resistance
  • Robust and reliable

Applications

AI Translation
  • Direct logic level interface
  • Battery-powered systems
  • Solid-state relays