LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Infineon BAT1503WE6327HTSA1 product image
  • BAT1503WE6327HTSA1 thumbnail 1
  • BAT1503WE6327HTSA1 thumbnail 2
  • BAT1503WE6327HTSA1 thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

Infineon BAT1503WE6327HTSA1RoHS

Manufacturer
Infineon
MPN
BAT1503WE6327HTSA1
LCSC Part #
C5310874
Packaging
SOD-323
Customer #
Key Attributes
DIODE SCHOTTKY 4V SOD-323
Datasheetpdf iconInfineon BAT1503WE6327HTSA1

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Diodes/RF Diodes
ManufacturerInfineon
PackagingSOD-323
Diode Configuration1 Independent
Current - Rectified110mA
Reverse Leakage Current (Ir)5uA@1V
Voltage - Forward(Vf@If)410mV@10mA
DC Reverse Voltage(Vr)4V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Features

AI Translation
  • Low inductance: LS = 1.8 nH (typical)
  • Low capacitance: C = 0.28 pF (typical) at 1 MHz
  • Industry standard SOD323 package (2.5 mm × 1.25 mm × 0.9 mm)
  • Pb-free, RoHS compliant and halogen-free

Applications

AI Translation
  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
In-Stock: 8,338
8,338 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4843$ 0.48
10+$ 0.3874$ 3.87
30+$ 0.3462$ 10.39
100+$ 0.2938$ 29.38
500+$ 0.2588$ 129.40
1,000+$ 0.2446$ 244.60
Standard Packaging3000/Full Reel
Better price for more quantity?
$