- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
UTC 15N06G-TN3-R
| Manufacturer | UTCAsian Brands |
| MPN | 15N06G-TN3-R |
| LCSC Part # | C5310412 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 15A TO-252 |
| Datasheet | UTC 15N06G-TN3-R |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 136pF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 30nC | |
| Vgs | ±15V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 136pF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 30nC | |
| Vgs | ±15V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- RDS(ON) ≤ 100 mΩ @ VGS=10V, VD=7.5A
- Low capacitance
- Low gate charge
- Fast switching capability
- Avalanche energy specified
Applications
AI Translation
- load switch
- PWM applications
In-Stock: 2,010
2,010 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1589 | $ 0.79 |
| 50+ | $ 0.1394 | $ 6.97 |
| 150+ | $ 0.1311 | $ 19.67 |
| 500+ | $ 0.1207 | $ 60.35 |
| 2,500+ | $ 0.1161 | $ 290.25 |
| 5,000+ | $ 0.1133 | $ 566.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 136pF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 30nC | |
| Vgs | ±15V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 136pF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 950pF | |
| Gate Charge(Qg) | 30nC | |
| Vgs | ±15V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- RDS(ON) ≤ 100 mΩ @ VGS=10V, VD=7.5A
- Low capacitance
- Low gate charge
- Fast switching capability
- Avalanche energy specified
Applications
AI Translation
- load switch
- PWM applications
C5310412 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| 19N10L-TN3-R | UTC | TO-252 | 5 | $ 0.2817 | ||
| 30N06-TN3-R | UTC | TO-252 | 695 | $ 0.3135 | ||
| UTT30N06G | UTC | TO-252 | 860 | $ 0.2335 | ||
| UTT50N06G | UTC | TO-252 | 445 | $ 0.3141 | ||
| UFZ24NL-F | UTC | TO-252 | 145 | $ 0.2567 | ||
| UTT24N06G-TN3-R | UTC | TO-252-2 | 0 | $ 0.3789 | ||
| 25N10L-TN3-R | UTC | TO-252-2 | 0 | $ 0.3217 | ||
| UF640G-TN3-R | UTC | TO-252 | 0 | $ 0.5573 | ||
| 15NM70G-U2-TN3-R | UTC | TO-252-2 | 0 | $ 0.9915 | ||
| UF640L-TN3-R | UTC | TO-252 | 0 | $ 0.3526 |