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UTC 2SK3666G-3-AE3-R product image
  • 2SK3666G-3-AE3-R thumbnail 1
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  • Pinout Diagram
  • Footprint Diagram
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UTC 2SK3666G-3-AE3-RRoHS

Manufacturer
UTCAsian Brands
MPN
2SK3666G-3-AE3-R
LCSC Part #
C5310366
Packaging
SOT-23
Customer #
Key Attributes
N-CHANNEL JUNCTIN SILICON FET
Datasheetpdf iconUTC 2SK3666G-3-AE3-R

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/JFETs
ManufacturerUTC
PackagingSOT-23
FET TypeN-Channel
Ciss-Input Capacitance4pF
Operating Temperature-
Drain Current (Idss)6mA
Number1 N-channel
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss)-
Configuration-
RDS(on)270Ω
Gate-Source Breakdown Voltage (Vgss)-
Gate-Source Cutoff Voltage (VGS(off))950mV
Output Capacitance(Coss)-
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS.

Features

AI Translation
  • Low IGSS
  • Low CRSS

Applications

AI Translation
  • low-frequency general-purpose amplifier
  • impedance conversion
  • infrared sensor applications
In-Stock: 1,715
1,715 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0989$ 0.49
50+$ 0.0788$ 3.94
150+$ 0.0688$ 10.32
500+$ 0.0612$ 30.60
3,000+$ 0.0531$ 159.30
6,000+$ 0.0501$ 300.60
Standard Packaging3000/Full Reel
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