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MDD(Microdiode Semiconductor) MDD68N10D product image
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MDD(Microdiode Semiconductor) MDD68N10D

Manufacturer
MDD(Microdiode Semiconductor)Asian Brands
MPN
MDD68N10D
LCSC Part #
C53069242
Packaging
TO-252
Customer #
Key Attributes
95W 100V 68A 7.6mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs
DatasheetMDD(Microdiode Semiconductor) MDD68N10D
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMDD(Microdiode Semiconductor)
PackagingTO-252
Output Capacitance(Coss)743pF
Ciss-Input Capacitance1.645nF
Pd - Power Dissipation95W
Configuration-
Drain to Source Voltage100V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)68A
Reverse Transfer Capacitance (Crss)22pF
RDS(on)7.6mΩ@10V
Number1 N-channel
Gate Charge(Qg)28nC
Vgs±20V
Gate Threshold Voltage (Vgs(th))2.8V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET is manufactured using MDD's advanced power trench technology. The process is optimized to minimize on-resistance while maintaining superior switching performance, backed by best-in-class soft body diode characteristics.

Features

AI Translation
  • Maximum R<sub>DS(on)</sub> = 9 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 20 A
  • Extremely low reverse recovery charge Qg
  • 100% UIS tested
  • RoHS compliant

Applications

AI Translation
  • Power management in telecom and industrial automation
  • Motor drives and uninterruptible power supplies
  • Current switching in DC/DC and AC/DC (SR) subsystems