TDSEMIC S8050 J3Y-TD(0.4)

Hersteller	TDSEMICAsian Brands
Herst.-Teilenr.	S8050 J3Y-TD(0.4)
LCSC-Nr.	C53064194
Verp.	SOT-23
Kundennummer
Hauptmerkm.	25V 85 1.5A NPN SOT-23 Single Bipolar Transistors
Datenblatt	TDSEMIC S8050 J3Y-TD(0.4)

Produktspezifikationen

Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Hersteller	TDSEMIC
Verp.	SOT-23
Current - Collector Cutoff	100nA
Operating Temperature	-55℃~+150℃
Transition frequency(fT)	100MHz
Collector - Emitter Voltage VCEO	25V
DC Current Gain	85
Emitter-Base Voltage VEBO	5V
Pd - Power Dissipation	1W
Current - Collector(Ic)	1.5A
type	NPN
Vce Saturation(VCE(sat))	300mV

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Hersteller	TDSEMIC
Verp.	SOT-23
Current - Collector Cutoff	100nA
Operating Temperature	-55℃~+150℃
Transition frequency(fT)	100MHz
Collector - Emitter Voltage VCEO	25V

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Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Hersteller	TDSEMIC
Verp.	SOT-23
Current - Collector Cutoff	100nA
Operating Temperature	-55℃~+150℃
Transition frequency(fT)	100MHz
Collector - Emitter Voltage VCEO	25V
DC Current Gain	85
Emitter-Base Voltage VEBO	5V
Pd - Power Dissipation	1W
Current - Collector(Ic)	1.5A
type	NPN
Vce Saturation(VCE(sat))	300mV

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Hersteller	TDSEMIC
Verp.	SOT-23
Current - Collector Cutoff	100nA
Operating Temperature	-55℃~+150℃
Transition frequency(fT)	100MHz
Collector - Emitter Voltage VCEO	25V