R+O HK10N020SG-B

Manufacturer	R+OAsian Brands
MPN	HK10N020SG-B
LCSC Part #	C52766436
Packaging	TOLL-8
Customer #
Key Attributes	370W 100V 350A 3V 1.3mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS
Datasheet	R+O HK10N020SG-B

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	R+O
Packaging	TOLL-8
Output Capacitance(Coss)	1.989nF
Pd - Power Dissipation	370W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	350A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Reverse Transfer Capacitance (Crss@Vds)	42pF
RDS(on)	1.3mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	12.22nF@50V
Gate Charge(Qg)	175nC@10V
Vgs	±20V
Type	N-Channel

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Qty	Unit Price(Reference Only)	Total Amount
1+	$ 1.1374	$ 1.14
10+	$ 1.1118	$ 11.12
30+	$ 1.0957	$ 32.87
100+	$ 1.0781	$ 107.81
Standard Packaging2000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	R+O
Packaging	TOLL-8
Output Capacitance(Coss)	1.989nF
Pd - Power Dissipation	370W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	350A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Reverse Transfer Capacitance (Crss@Vds)	42pF
RDS(on)	1.3mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	12.22nF@50V
Gate Charge(Qg)	175nC@10V
Vgs	±20V
Type	N-Channel