TOSHIBA SSM10N954L,EFF(S
| Manufacturer | |
| MPN | SSM10N954L,EFF(S |
| LCSC Part # | C5274420 |
| Packaging | TCSPAC-153001 |
| Customer # | |
| Key Attributes | MOSFET N-CH 12V 13.5A TCSPAC-153001 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | TCSPAC-153001 | |
| Configuration | Common source | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 13.5A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 2.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@4V | |
| Vgs | ±8V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | TCSPAC-153001 | |
| Configuration | Common source | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 13.5A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 2.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@4V | |
| Vgs | ±8V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low source-to-source on-resistance
- RoHS compliant
- Halogen-free
Applications
AI Translation
- Battery protection circuit
In-Stock: 5,804
5,804 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.3809 | $ 0.38 |
| 10+ | $ 0.3369 | $ 3.37 |
| 30+ | $ 0.3174 | $ 9.52 |
| 100+ | $ 0.293 | $ 29.30 |
| 500+ | $ 0.2832 | $ 141.60 |
| 1,000+ | $ 0.2767 | $ 276.70 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | TCSPAC-153001 | |
| Configuration | Common source | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 13.5A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 2.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@4V | |
| Vgs | ±8V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | TCSPAC-153001 | |
| Configuration | Common source | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 13.5A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 2.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@4V | |
| Vgs | ±8V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low source-to-source on-resistance
- RoHS compliant
- Halogen-free
Applications
AI Translation
- Battery protection circuit
C5274420 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



