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TOSHIBA SSM3J35AMFV,L3F product image
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TOSHIBA SSM3J35AMFV,L3FRoHS

Manufacturer
TOSHIBA
MPN
SSM3J35AMFV,L3F
LCSC Part #
C5274156
Packaging
SOT-723
Customer #
Key Attributes
MOSFET P-CH 20V 250mA SOT-723
Datasheetpdf iconTOSHIBA SSM3J35AMFV,L3F
In-Stock: 4,355
4,355 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.0765$ 0.38
50+$ 0.0601$ 3.01
150+$ 0.0519$ 7.79
500+$ 0.0457$ 22.85
2,500+$ 0.0408$ 102.00
5,000+$ 0.0363$ 181.50
Standard Packaging8000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingSOT-723
Drain to Source Voltage20V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)250mA
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)1.1Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)21pF
TypeP-Channel
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Introduction

AI Translation

The SI2333CDS-T1-MS utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 2.5V gate voltage. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • 1.2V drive
  • Low drain-source on-resistance:
    • RDS(ON) = 3.2Ω (typ) at VGS = -1.2V
    • RDS(ON) = 2.3Ω (typ) at VGS = -1.5V
    • RDS(ON) = 2.0Ω (typ) at VGS = -1.8V
    • RDS(ON) = 1.5Ω (typ) at VGS = -2.5V
    • RDS(ON) = 1.1Ω (typ) at VGS = -4.5V

Applications

AI Translation
  • Analog Switch