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VBsemi Elec BSC12DN20NS3GATMA1-VB
| Produttore | VBsemi ElecAsian Brands |
| Cod. Prod. | BSC12DN20NS3GATMA1-VB |
| Cod. LCSC | C52711342 |
| Imballo | DFN-8(5x6) |
| Numero Cliente | |
| Attr. chiave | 136W 200V 20A 63mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs |
| Scheda Tecnica | VBsemi Elec BSC12DN20NS3GATMA1-VB |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | DFN-8(5x6) | |
| Output Capacitance(Coss) | 470pF | |
| Ciss-Input Capacitance | 1.1nF | |
| Pd - Power Dissipation | 136W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 225pF | |
| RDS(on) | 63mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | DFN-8(5x6) | |
| Output Capacitance(Coss) | 470pF | |
| Ciss-Input Capacitance | 1.1nF | |
| Pd - Power Dissipation | 136W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 200V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 225pF | |
| RDS(on) | 63mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Junction temperature 175 °C
- SGT technology power MOSFET
- Material classification: RoHS compliant
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | DFN-8(5x6) | |
| Output Capacitance(Coss) | 470pF | |
| Ciss-Input Capacitance | 1.1nF | |
| Pd - Power Dissipation | 136W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 225pF | |
| RDS(on) | 63mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | DFN-8(5x6) | |
| Output Capacitance(Coss) | 470pF | |
| Ciss-Input Capacitance | 1.1nF | |
| Pd - Power Dissipation | 136W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 200V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 225pF | |
| RDS(on) | 63mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Junction temperature 175 °C
- SGT technology power MOSFET
- Material classification: RoHS compliant
C52711342 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |