micron MT41K64M16TW-107 IT:J
| Manufacturer | |
| MPN | MT41K64M16TW-107 IT:J |
| LCSC Part # | C524855 |
| Packaging | FBGA-96 |
| Customer # | |
| Key Attributes | 1Gb:x4,x8,x16 DDR3L SDRAM |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | micron | |
| Packaging | FBGA-96 | |
| Refresh Current | 12mA | |
| Voltage - Supply | 1.283V~1.45V | |
| Memory Size | 1Gbit | |
| Operating temperature | -40℃~+95℃ | |
| Clock Frequency | 933MHz | |
| Features | Auto self-refresh;Auto precharge function;Write leveling function;Dynamic on-chip termination;Asynchronous reset function;Data mask function;ZQ calibration function | |
| Memory Format | DDR3L SDRAM | |
| Current - Supply | 46mA |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.
Features
AI Translation
- VDD = VDDQ = +1.35V (1.283V to 1.45V)
- Backward compatible to VDD = VDDQ = 1.5V ± 0.075V
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Programmable CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode
- TC of 95℃ – 64ms, 8192-cycle refresh up to 85℃ 32ms, 8192-cycle refresh at >85℃ to 95℃
- Self refresh temperature (SRT)
- Automatic self refresh (ASR)
In-Stock: 97
97 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 12.1435 | $ 12.14 |
| 10+ | $ 10.5058 | $ 105.06 |
| 30+ | $ 9.507 | $ 285.21 |
| 100+ | $ 7.5287 | $ 752.87 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | micron | |
| Packaging | FBGA-96 | |
| Refresh Current | 12mA | |
| Voltage - Supply | 1.283V~1.45V | |
| Memory Size | 1Gbit | |
| Operating temperature | -40℃~+95℃ | |
| Clock Frequency | 933MHz | |
| Features | Auto self-refresh;Auto precharge function;Write leveling function;Dynamic on-chip termination;Asynchronous reset function;Data mask function;ZQ calibration function | |
| Memory Format | DDR3L SDRAM | |
| Current - Supply | 46mA |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.
Features
AI Translation
- VDD = VDDQ = +1.35V (1.283V to 1.45V)
- Backward compatible to VDD = VDDQ = 1.5V ± 0.075V
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Programmable CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode
- TC of 95℃ – 64ms, 8192-cycle refresh up to 85℃ 32ms, 8192-cycle refresh at >85℃ to 95℃
- Self refresh temperature (SRT)
- Automatic self refresh (ASR)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



