DIODES ZXM61N02FTC
| Manufacturer | |
| MPN | ZXM61N02FTC |
| LCSC Part # | C5245468 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 20V 1.7A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 625mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 180mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 160pF | |
| Gate Charge(Qg) | 3.4nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation of high density MOSFETs utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Features
AI Translation
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- SOT23 package
Applications
AI Translation
- DC - DC Converters
- Power Management Functions
- Disconnect switches
- Motor control
In-Stock: 50
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7847 | $ 0.78 |
| 10+ | $ 0.6743 | $ 6.74 |
| 30+ | $ 0.6207 | $ 18.62 |
| 100+ | $ 0.5654 | $ 56.54 |
| 500+ | $ 0.5329 | $ 266.45 |
| 1,000+ | $ 0.5167 | $ 516.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 625mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 180mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 160pF | |
| Gate Charge(Qg) | 3.4nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation of high density MOSFETs utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Features
AI Translation
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- SOT23 package
Applications
AI Translation
- DC - DC Converters
- Power Management Functions
- Disconnect switches
- Motor control
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

