DIODES DMP2200UFCL-7
| Manufacturer | |
| MPN | DMP2200UFCL-7 |
| LCSC Part # | C5245366 |
| Packaging | UDFN1616-6 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 20V 1.7A UDFN1616-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | UDFN1616-6 | |
| Current - Continuous Drain(Id) | 1.7A | |
| RDS(on) | 650mΩ@1.5V | |
| Pd - Power Dissipation | 1.58W | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Drain to Source Voltage | 20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18.6pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 184pF | |
| Gate Charge(Qg) | 2.2nC | |
| Operating Temperature | -55℃~+150℃ |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device provides a high performance, low RDS(ON) P-Channel MOSFET in the thermally and spatially efficient U-DFN1616-6 (Type F) package. The low RDS(ON) of this MOSFET ensures conduction losses are kept making it ideal for use in the following applications.
Features
AI Translation
- Typical Off Board Profile of 0.5mm – Ideally Suited for Thin Applications
- Low RDS(ON) – Minimizes Conduction Losses
- PCB Footprint of 2.56mm²
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- ESD Protected Gate
Applications
AI Translation
- Battery Disconnect Switch
- Load Switch for Power Management Functions
In-Stock: 2,905
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1984 | $ 0.99 |
| 50+ | $ 0.1575 | $ 7.88 |
| 150+ | $ 0.14 | $ 21.00 |
| 500+ | $ 0.1181 | $ 59.05 |
| 2,500+ | $ 0.1084 | $ 271.00 |
| 5,000+ | $ 0.1026 | $ 513.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | UDFN1616-6 | |
| Current - Continuous Drain(Id) | 1.7A | |
| RDS(on) | 650mΩ@1.5V | |
| Pd - Power Dissipation | 1.58W | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Drain to Source Voltage | 20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18.6pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 184pF | |
| Gate Charge(Qg) | 2.2nC | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device provides a high performance, low RDS(ON) P-Channel MOSFET in the thermally and spatially efficient U-DFN1616-6 (Type F) package. The low RDS(ON) of this MOSFET ensures conduction losses are kept making it ideal for use in the following applications.
Features
AI Translation
- Typical Off Board Profile of 0.5mm – Ideally Suited for Thin Applications
- Low RDS(ON) – Minimizes Conduction Losses
- PCB Footprint of 2.56mm²
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- ESD Protected Gate
Applications
AI Translation
- Battery Disconnect Switch
- Load Switch for Power Management Functions
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



