DIODES DMP21D2UFA-7B
| Manufacturer | |
| MPN | DMP21D2UFA-7B |
| LCSC Part # | C5245365 |
| Packaging | X2-DFN0806-3 |
| Customer # | |
| Key Attributes | 20V 330mA 1V 360mW 1.6Ω@1.8V 1 P-Channel X2-DFN0806-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | X2-DFN0806-3 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 330mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 1.6Ω@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 800pC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low profile, maximum package height 0.4mm
- Package size 0.48;mm^2, 16x smaller than SOT23
- Low on-resistance
- Ultra-low gate threshold voltage, max 1.0V
- Gate ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen and antimony-free, "green" device
Applications
AI Translation
- General-purpose interface switch
- Power management function
- Analog switch
In-Stock: 70
70 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1998 | $ 1.00 |
| 50+ | $ 0.1586 | $ 7.93 |
| 150+ | $ 0.141 | $ 21.15 |
| 500+ | $ 0.119 | $ 59.50 |
| 2,500+ | $ 0.1092 | $ 273.00 |
| 5,000+ | $ 0.1033 | $ 516.50 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | X2-DFN0806-3 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 330mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 1.6Ω@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 800pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low profile, maximum package height 0.4mm
- Package size 0.48;mm^2, 16x smaller than SOT23
- Low on-resistance
- Ultra-low gate threshold voltage, max 1.0V
- Gate ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen and antimony-free, "green" device
Applications
AI Translation
- General-purpose interface switch
- Power management function
- Analog switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



