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ElecSuper BSS138WH6327-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS138WH6327-ES
LCSC Part #
C5224285
Packaging
SOT-323
Customer #
Key Attributes
MOSFET N-CH 60V 360mA SOT-323
Datasheetpdf iconElecSuper BSS138WH6327-ES
In-Stock: 3,000
3,000 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0304$ 0.61
200+$ 0.0231$ 4.62
600+$ 0.0191$ 11.46
3,000+$ 0.0167$ 50.10
9,000+$ 0.0146$ 131.40
21,000+$ 0.0135$ 283.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-323
Drain to Source Voltage60V
Output Capacitance(Coss)9.7pF
Current - Continuous Drain(Id)360mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)650pC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS138WH6327-ES is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138WH6327-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.5Ω (typical), VGS = 10V
  • RDS(ON) = 1.6Ω (typical), VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion