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ElecSuper BSS138W-TP-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS138W-TP-ES
LCSC Part #
C5224284
Packaging
SOT-323
Customer #
Key Attributes
MOSFET N-CH 60V 360mA SOT-323
Datasheetpdf iconElecSuper BSS138W-TP-ES
In-Stock: 795
795 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.024$ 0.12
50+$ 0.0188$ 0.94
150+$ 0.0159$ 2.39
500+$ 0.0141$ 7.05
3,000+$ 0.0124$ 37.20
6,000+$ 0.0116$ 69.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-323
Drain to Source Voltage60V
Output Capacitance(Coss)9.7pF
Current - Continuous Drain(Id)360mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)650pC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS138W-TP-ES is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138W-TP-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.5Ω (typical), VGS = 10V
  • RDS(ON) = 1.6Ω (typical), VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion