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ElecSuper BSS138W-7-F-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS138W-7-F-ES
LCSC Part #
C5224279
Packaging
SOT-323
Customer #
Key Attributes
MOSFET N-CH 60V 360mA SOT-323
Datasheetpdf iconElecSuper BSS138W-7-F-ES
In-Stock: 25,220
25,220 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0225$ 0.23
100+$ 0.0173$ 1.73
300+$ 0.0144$ 4.32
3,000+$ 0.014$ 42.00
6,000+$ 0.0124$ 74.40
9,000+$ 0.0116$ 104.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-323
Drain to Source Voltage60V
Output Capacitance(Coss)9.7pF
Current - Continuous Drain(Id)360mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation236mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.5Ω@10V;1.6Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)650pC@4.5V
TypeN-Channel

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS138W-7-F-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138W-7-F-ES is lead-free.

Features

AI Translation
  • 60V, R<sub>DS(ON)</sub> = 1.5 Ω (typical), V<sub>GS</sub> = 10V
  • R<sub>DS(ON)</sub> = 1.6 Ω (typical), V<sub>GS</sub> = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low R<sub>DS(ON)</sub>
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion