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ElecSuper BSS138-TP-ES product image
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ElecSuper BSS138-TP-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS138-TP-ES
LCSC Part #
C5224266
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 400mA SOT-23
Datasheetpdf iconElecSuper BSS138-TP-ES
In-Stock: 3,000
3,000 In stock, ships now
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QtyUnit PriceTotal Amount
50+$ 0.0124$ 0.62
500+$ 0.0096$ 4.80
3,000+$ 0.008$ 24.00
6,000+$ 0.0071$ 42.60
24,000+$ 0.0063$ 151.20
51,000+$ 0.0059$ 300.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)9.7pF
Current - Continuous Drain(Id)400mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation417mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)650pC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

BSS138-TP-ES is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138-TP-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.5 Ω (typical), VGS = 10 V
  • RDS(ON) = 1.6 Ω (typical), VGS = 4.5 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion