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ElecSuper 2N7002DWH6327-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
2N7002DWH6327-ES
LCSC Part #
C5224256
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH ARR 60V 300mA SOT-363
Datasheetpdf iconElecSuper 2N7002DWH6327-ES
In-Stock: 3,000
3,000 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0405$ 0.81
200+$ 0.0309$ 6.18
600+$ 0.0255$ 15.30
3,000+$ 0.0223$ 66.90
9,000+$ 0.0195$ 175.50
21,000+$ 0.018$ 378.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-363
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.85Ω@10V;2.05Ω@4.5V
Number2 N-Channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

2N7002DWH6327-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product 2N7002DWH6327-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.85Ω (typ.) @ VGS = 10V
  • RDS(ON) = 2.05Ω (typ.) @ VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • ESD protection - HBM: 2kV
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion