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MICROCHIP AT45DB041E-MHN-Y product image
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MICROCHIP AT45DB041E-MHN-YRoHS

Manufacturer
MICROCHIP
MPN
AT45DB041E-MHN-Y
LCSC Part #
C52146112
Packaging
UDFN-8(5x6)
Customer #
Key Attributes
4Mbit 1.65V~3.6V 85MHz SPI UDFN-8(5x6) Memory RoHS
Datasheetpdf iconMICROCHIP AT45DB041E-MHN-Y
In-Stock: 10
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QtyUnit PriceTotal Amount
1+$ 2.8498$ 2.85
10+$ 2.7818$ 27.82
30+$ 2.7348$ 82.04
100+$ 2.6894$ 268.94
Standard Packaging570/Full Tray
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerMICROCHIP
PackagingUDFN-8(5x6)
Operating Temperature-
Features-
Memory Size4Mbit
Voltage - Supply1.65V~3.6V
Program / Erase Cycles-
Clock Frequency85MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)3ms
Standby Supply Current25uA
InterfaceSPI
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Features

AI Translation
  • Single 1.65 V – 3.6 V supply voltage
  • SPI compatible
  • Supports SPI modes 0 and 3
  • Supports RapidS™ operation
  • Continuous read of entire array
  • Up to 85 MHz
  • Low power read option up to 15 MHz
  • Clock-to-output time (tV) 6 ns maximum
  • User-configurable page size
  • 256 bytes per page
  • 264 bytes per page (default)
  • Factory pre-configurable page size of 256 bytes
  • Two fully independent SRAM data buffers (256/264 bytes)
  • Allows receipt of data during reprogramming of main memory array
  • Flexible programming options
  • Byte/page programming (1 to 256/264 bytes) with direct write to main memory
  • Buffer write
  • Buffer to main memory page programming
  • Flexible erase options
  • Page erase (256/264 bytes)
  • Block erase (2 kB)
  • Sector erase (64 kB)
  • Chip erase (4 Mbit)
  • Program and erase suspend/resume
  • Advanced hardware and software data protection
  • Individual sector protection
  • Individual sector lockdown for permanent read-only sectors
  • 128-byte one-time programmable (OTP) security register
  • 64 bytes factory programmed with unique identifier
  • 64 bytes user programmable
  • Hardware and software controlled reset options
  • JEDEC-compliant manufacturer and device ID read
  • Low power consumption
  • 400 nA ultra-deep power-down current (typical)
  • 3 μA deep power-down current (typical)
  • 25 μA standby current (typical)
  • 7 mA active read current (typical at 15 MHz)
  • Endurance:
  • 100,000 program/erase cycles at -40°C to +85°C
  • 10,000 program/erase cycles at -40°C to +125°C
  • Data retention: 20 years
  • Full industrial temperature range compliant
  • Green (lead-free/halogen-free/RoHS compliant) package options
  • 8-lead SOIC (150-mil wide and 208-mil wide)
  • 8-pad ultra-thin DFN (5×6×0.6 mm)
  • Die in wafer form (contact factory for availability)