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ST STP4N80K5

Produttore
ST
Cod. Prod.
STP4N80K5
Cod. LCSC
C5199081
Imballo
TO-220
Numero Cliente
Attr. chiave
MOSFET 800V 3A TO-220
Scheda TecnicaST STP4N80K5
Conformità RoHS1 documenti disponibili
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreST
ImballoTO-220
Output Capacitance(Coss)18pF
Ciss-Input Capacitance175pF
Pd - Power Dissipation60W
Configuration-
Drain to Source Voltage800V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)3A
Reverse Transfer Capacitance (Crss)0.5pF
RDS(on)2.5Ω@10V
Number1 N-channel
Gate Charge(Qg)10.5nC@640V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Descrizione

Traduzione AI

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Caratteristiche

Traduzione AI
  • Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested Zener-protected

Applicazioni

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