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HXY MOSFET NTMFS4D2N10MDT1G-HXY product image
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HXY MOSFET NTMFS4D2N10MDT1G-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
NTMFS4D2N10MDT1G-HXY
LCSC Part #
C51949336
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
176W 100V 120A 3V 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET NTMFS4D2N10MDT1G-HXY
In-Stock: 95
95 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.5686$ 1.2549$ 1.25
10+$ 1.3353$ 1.0683$ 10.68
30+$ 1.19$ 0.9520$ 28.56
100+$ 1.0401$ 0.8321$ 83.21
500+$ 0.9736$ 0.7789$ 389.45
1,000+$ 0.9443$ 0.7555$ 755.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(5x6)
Output Capacitance(Coss)592pF
Pd - Power Dissipation176W
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)3.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19.8pF
Number1 N-channel
Input Capacitance(Ciss)4.102nF
Gate Charge(Qg)69nC@10V
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

The NTMFS4D2N10MDT1G employs advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Drain-source voltage VDS = 100 V, drain current ID = 120 A
  • On-resistance RDS(ON) < 4.4 mΩ at gate-source voltage VGS = 10 V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC
  • Synchronous rectification applications