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HXY MOSFET NVMFS5C646NLWFAFT1G-HXY product image
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HXY MOSFET NVMFS5C646NLWFAFT1G-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
NVMFS5C646NLWFAFT1G-HXY
LCSC Part #
C51949324
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
73.5W 60V 100A 2.9V 3.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET NVMFS5C646NLWFAFT1G-HXY
In-Stock: 97
97 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.567$ 1.2536$ 1.25
10+$ 1.3339$ 1.0672$ 10.67
30+$ 1.1888$ 0.9511$ 28.53
100+$ 1.039$ 0.8312$ 83.12
500+$ 0.9726$ 0.7781$ 389.05
1,000+$ 0.9433$ 0.7547$ 754.70
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(5x6)
Output Capacitance(Coss)773pF
Pd - Power Dissipation73.5W
Drain to Source Voltage60V
ConfigurationStandalone
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Reverse Transfer Capacitance (Crss@Vds)46.8pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.673nF
Gate Charge(Qg)28.5nC@10V
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

NVMFS5C646NLWFAFT1G utilizes advanced SGT MOSFET technology, featuring low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Drain-source voltage VDS = 60 V, drain current ID = 100 A
  • On-resistance RDS(ON) < 5 mΩ at gate-source voltage VGS = 10 V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC
  • Synchronous rectification applications