HXY MOSFET BSC0504NSI-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	BSC0504NSI-HXY
LCSC Part #	C51949188
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	115W 30V 120A 1.6V 2.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET BSC0504NSI-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	480pF
Pd - Power Dissipation	115W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	2.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	340pF
Number	1 N-channel
Input Capacitance(Ciss)	2.218nF
Gate Charge(Qg)	24nC@15V
Vgs	±20V
Type	N-Channel

In-Stock: 97

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Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.5823	$ 0.58
10+	$ 0.4728	$ 4.73
30+	$ 0.4173	$ 12.52
100+	$ 0.3634	$ 36.34
500+	$ 0.3301	$ 165.05
1,000+	$ 0.3142	$ 314.20
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Output Capacitance(Coss)	480pF
Pd - Power Dissipation	115W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.6V
RDS(on)	2.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	340pF
Number	1 N-channel
Input Capacitance(Ciss)	2.218nF
Gate Charge(Qg)	24nC@15V
Vgs	±20V
Type	N-Channel