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ZHHXDZ IR2136STRPBF-HX product image
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ZHHXDZ IR2136STRPBF-HXRoHS

Manufacturer
ZHHXDZAsian Brands
MPN
IR2136STRPBF-HX
LCSC Part #
C51934037
Packaging
SOIC-28
Customer #
Key Attributes
10V~20V SOIC-28 Gate Drivers RoHS
Datasheetpdf iconZHHXDZ IR2136STRPBF-HX
In-Stock: 426
426 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.656$ 0.5904$ 0.59
10+$ 0.5214$ 0.4693$ 4.69
30+$ 0.4549$ 0.4095$ 12.29
100+$ 0.3884$ 0.3496$ 34.96
500+$ 0.3497$ 0.3148$ 157.40
1,000+$ 0.328$ 0.2952$ 295.20
Standard Packaging1000/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerZHHXDZ
PackagingSOIC-28
Input Logic Level - Low800mV
Low Level Delay Time-
High Level Delay Time-
Quiescent Current1.6mA
Input Logic Level - High3V
Operating Temperature-40℃~+125℃
Voltage - Supply10V~20V
Driven ConfigurationThree Phase;Half-Bridge
Current - Output Low(IOL)-
Rise Time125ns
Fall Time50ns
Current - Output High(IOH)-
FeaturesUnder Voltage Protection;Enable shutdown;Over Current Protection;Interleaved conduction protection;Dead-time control
Load TypeMOSFET;IGBT

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

IR2136STRPBF-HX is a high-voltage, high-speed power MOSFET and IGBT driver featuring three independent output channels referenced to high-side and low-side respectively, designed for three-phase applications. Its proprietary high-voltage IC technology enables a robust monolithic structure. Logic inputs are compatible with CMOS or LSTTL outputs, with logic levels as low as 3.3V. The device provides a current trip function that terminates all six outputs based on an external current sense resistor. Additionally, an enable function allows simultaneous termination of all six outputs. An open-drain FAULT signal indicates overcurrent or undervoltage shutdown events. Overcurrent fault conditions can be automatically cleared after a delay programmed via an external RC network connected to the RCIN input. The output drivers incorporate a high-pulse-current buffer stage designed to minimize driver shoot-through. Propagation delays are matched to facilitate use in high-frequency applications. The floating channels can drive N-channel power MOSFETs or IGBTs in a high-side configuration at operating voltages up to 600V.

Features

AI Translation
  • Floating channel designed for bootstrap operation
  • Full operating voltage up to +600V
  • Tolerates negative transient voltage, immune to dV/dt
  • Gate drive supply range from 10V to 20V
  • Under-voltage lockout on all channels
  • Overcurrent shutdown disables all six drivers
  • Independent three half-bridge drivers
  • Matched propagation delay on all channels
  • Cross-conduction prevention logic
  • Low-side output inverted from input, high-side output inverted
  • Compatible with 3.3V logic levels
  • Lower di/dt gate drive for improved noise immunity
  • Externally programmable delay for automatic fault clearing
  • All components are lead-free