MSKSEMI CSD16321Q5-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | CSD16321Q5-MS |
| LCSC Part # | C51928006 |
| Packaging | DFN-8L(5x6) |
| Customer # | |
| Key Attributes | 187W 30V 150A 1.2V 2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 340pF | |
| Pd - Power Dissipation | 187W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The CSD16321Q5-MS utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation down to 4.5V gate voltage. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 30 V, ID = 150 A
- RDS(ON) < 2.4 mΩ (VGS = 10 V)
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 333
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5632$ 0.5351 | $ 0.54 |
| 10+ | $ 0.458$ 0.4351 | $ 4.35 |
| 30+ | $ 0.4038$ 0.3837 | $ 11.51 |
| 100+ | $ 0.3512$ 0.3337 | $ 33.37 |
| 500+ | $ 0.3203$ 0.3043 | $ 152.15 |
| 1,000+ | $ 0.3033$ 0.2882 | $ 288.20 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 340pF | |
| Pd - Power Dissipation | 187W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The CSD16321Q5-MS utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation down to 4.5V gate voltage. The device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 30 V, ID = 150 A
- RDS(ON) < 2.4 mΩ (VGS = 10 V)
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



