MSKSEMI CSD18563Q5A-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | CSD18563Q5A-MS |
| LCSC Part # | C51927987 |
| Packaging | DFN-8L(5x6) |
| Customer # | |
| Key Attributes | 108W 60V 80A 3V 5.3mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 286pF | |
| Pd - Power Dissipation | 108W | |
| Drain to Source Voltage | 60V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF | |
| RDS(on) | 5.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.136nF | |
| Gate Charge(Qg) | 90nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 286pF | |
| Pd - Power Dissipation | 108W | |
| Drain to Source Voltage | 60V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 80A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF | |
| RDS(on) | 5.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.136nF | |
| Gate Charge(Qg) | 90nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The CSD18563Q5A-MS utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 60V, ID = 80A
- RDS(ON) < 7 mΩ, VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 221
221 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6034$ 0.5733 | $ 0.57 |
| 10+ | $ 0.4889$ 0.4645 | $ 4.65 |
| 30+ | $ 0.4317$ 0.4102 | $ 12.31 |
| 100+ | $ 0.376$ 0.3572 | $ 35.72 |
| 500+ | $ 0.3419$ 0.3249 | $ 162.45 |
| 1,000+ | $ 0.3249$ 0.3087 | $ 308.70 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 286pF | |
| Pd - Power Dissipation | 108W | |
| Drain to Source Voltage | 60V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF | |
| RDS(on) | 5.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.136nF | |
| Gate Charge(Qg) | 90nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 286pF | |
| Pd - Power Dissipation | 108W | |
| Drain to Source Voltage | 60V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 80A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF | |
| RDS(on) | 5.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.136nF | |
| Gate Charge(Qg) | 90nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The CSD18563Q5A-MS utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 60V, ID = 80A
- RDS(ON) < 7 mΩ, VGS = 10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
C51927987 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



