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MSKSEMI BSC027N06LS5ATMA1-MS product image
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MSKSEMI BSC027N06LS5ATMA1-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
BSC027N06LS5ATMA1-MS
LCSC Part #
C51927981
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
113W 60V 125A 1.6V 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI BSC027N06LS5ATMA1-MS
In-Stock: 248
248 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0335$ 0.9819$ 0.98
10+$ 0.8602$ 0.8172$ 8.17
30+$ 0.7658$ 0.7276$ 21.83
100+$ 0.6575$ 0.6247$ 62.47
500+$ 0.6111$ 0.5806$ 290.30
1,000+$ 0.5895$ 0.5601$ 560.10
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(5x6)
Output Capacitance(Coss)2.188nF
Pd - Power Dissipation113W
Drain to Source Voltage60V
ConfigurationStandalone
Current - Continuous Drain(Id)125A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.61nF
Gate Charge(Qg)74.37nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

BSC027N06LS5ATMA1-MS utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.

Features

AI Translation
  • Drain-source voltage V<sub>DS</sub> = 60 V
  • Drain current I<sub>D</sub> = 125 A
  • On-resistance R<sub>DS(ON)</sub> < 2.9 mΩ (at V<sub>GS</sub> = 10 V)

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC
  • Synchronous rectification applications