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MSKSEMI BSC070N10NS5-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
BSC070N10NS5-MS
LCSC Part #
C51927954
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
97W 100V 75A 1.6V 7.3mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI BSC070N10NS5-MS
In-Stock: 128
128 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7442$ 0.7070$ 0.71
10+$ 0.6034$ 0.5733$ 5.73
30+$ 0.5338$ 0.5072$ 15.22
100+$ 0.4642$ 0.4410$ 44.10
500+$ 0.4224$ 0.4013$ 200.65
1,000+$ 0.4007$ 0.3807$ 380.70
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(5x6)
Output Capacitance(Coss)865pF
Pd - Power Dissipation97W
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)7.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.046nF
Gate Charge(Qg)39.4nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

BSC070N10NS5-MS employs advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Drain-source voltage VDS = 100 V, drain current ID = 75 A
  • On-resistance RDS(ON) < 9.2 mΩ at gate-source voltage VGS = 10 V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification isolated DC
  • Synchronous rectification applications