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MSKSEMI BSC0702LSATMA1-MS product image
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MSKSEMI BSC0702LSATMA1-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
BSC0702LSATMA1-MS
LCSC Part #
C51927949
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
113W 60V 125A 1.6V 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI BSC0702LSATMA1-MS
In-Stock: 428
428 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7797$ 0.7408$ 0.74
10+$ 0.6328$ 0.6012$ 6.01
30+$ 0.5585$ 0.5306$ 15.92
100+$ 0.4858$ 0.4616$ 46.16
500+$ 0.4425$ 0.4204$ 210.20
1,000+$ 0.4208$ 0.3998$ 399.80
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(5x6)
Output Capacitance(Coss)2.188nF
Pd - Power Dissipation113W
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)125A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.61nF
Gate Charge(Qg)74.37nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

BSC0702LSATMA1-MS utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specially designed for enhanced durability and versatility.

Features

AI Translation
  • Drain-source voltage VDS = 60V, drain current ID = 125A
  • On-resistance RDS(ON) < 2.9 mΩ at gate-source voltage Vgs = 10V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC
  • Synchronous rectification applications