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MSKSEMI AON6576-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
AON6576-MS
LCSC Part #
C51927948
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
30W 30V 60A 1.2V 4.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI AON6576-MS
In-Stock: 345
345 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2294$ 0.2180$ 1.09
50+$ 0.1905$ 0.1810$ 9.05
150+$ 0.1738$ 0.1652$ 24.78
500+$ 0.153$ 0.1454$ 72.70
2,500+$ 0.1438$ 0.1367$ 341.75
5,000+$ 0.1382$ 0.1313$ 656.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(5x6)
Output Capacitance(Coss)498pF
Pd - Power Dissipation30W
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)4.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)814pF
Gate Charge(Qg)8nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

AON6576-MS utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Drain-source voltage VDS = 30V, drain current ID = 60A
  • On-resistance RDS(ON) < 5.8mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC power supplies
  • Synchronous rectification applications