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MDD(Microdiode Semiconductor) DTC114ECA
| Manufacturer | MDD(Microdiode Semiconductor)Asian Brands |
| MPN | DTC114ECA |
| LCSC Part # | C51913034 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 50V 30 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-23 Single, Pre-Biased Bipolar Transistors |
| Datasheet | MDD(Microdiode Semiconductor) DTC114ECA |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V | |
| Voltage - Input(Max)(VI(off)) | 500mV | |
| Operating temperature | -55℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | 300mV |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V | |
| Voltage - Input(Max)(VI(off)) | 500mV | |
| Operating temperature | -55℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Built-in bias resistors enable inverter circuit configuration without external input resistors
- Bias resistors consist of fully isolated thin-film resistors, allowing negative bias input while virtually eliminating parasitic effects
- Simple on/off operation simplifies device design
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In-Stock: 7,150
7,150 In stock, ships now
Minimum: 50Multiple: 50Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0178$ 0.0168 | $ 0.84 |
| 500+ | $ 0.0138$ 0.0130 | $ 6.50 |
| 3,000+ | $ 0.0117$ 0.0110 | $ 33.00 |
| 6,000+ | $ 0.0104$ 0.0098 | $ 58.80 |
| 24,000+ | $ 0.0092$ 0.0087 | $ 208.80 |
| 51,000+ | $ 0.0086$ 0.0081 | $ 413.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V | |
| Voltage - Input(Max)(VI(off)) | 500mV | |
| Operating temperature | -55℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | 300mV |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V | |
| Voltage - Input(Max)(VI(off)) | 500mV | |
| Operating temperature | -55℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Built-in bias resistors enable inverter circuit configuration without external input resistors
- Bias resistors consist of fully isolated thin-film resistors, allowing negative bias input while virtually eliminating parasitic effects
- Simple on/off operation simplifies device design
C51913034 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |