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MSKSEMI BSC123N08NS3G-MS product image
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MSKSEMI BSC123N08NS3G-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
BSC123N08NS3G-MS
LCSC Part #
C51908849
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
97W 100V 75A 1.6V 7.3mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI BSC123N08NS3G-MS
In-Stock: 315
315 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5317$ 0.53
10+$ 0.4312$ 4.31
30+$ 0.3818$ 11.45
100+$ 0.3308$ 33.08
500+$ 0.3014$ 150.70
1,000+$ 0.2859$ 285.90
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(5x6)
Output Capacitance(Coss)865pF
Pd - Power Dissipation97W
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)7.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.046nF
Gate Charge(Qg)39.4nC
Vgs±20V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

BSC123N08NS3G-MS adopts advanced SGT MOSFET technology, achieving low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability, suitable for

Features

AI Translation
  • Drain-source voltage VDS = 100 V, drain current ID = 75 A
  • On-resistance RDS(ON) < 9.2 mΩ at gate-source voltage VGS = 10 V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC power supplies
  • Synchronous rectification applications