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MSKSEMI BSC0702LS-MS product image
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MSKSEMI BSC0702LS-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
BSC0702LS-MS
LCSC Part #
C51908845
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
113W 60V 125A 1.6V 2.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI BSC0702LS-MS
In-Stock: 824
824 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6028$ 0.60
10+$ 0.4884$ 4.88
30+$ 0.4312$ 12.94
100+$ 0.3756$ 37.56
500+$ 0.3416$ 170.80
1,000+$ 0.3246$ 324.60
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(5x6)
Output Capacitance(Coss)2.188nF
Pd - Power Dissipation113W
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)125A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.61nF
Gate Charge(Qg)74.37nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

BSC0702LS-MS utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability, suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage VDS = 60 V, drain current ID = 125 A
  • On-resistance RDS(ON) < 2.9 mΩ at gate-source voltage VGS = 10 V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC power supplies
  • Synchronous rectification applications