HT(Shenzhen Jinyu Semicon) BC847PN
| Manufacturer | HT(Shenzhen Jinyu Semicon)Asian Brands |
| MPN | BC847PN |
| LCSC Part # | C5188663 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 45V 475 NPN+PNP 1 NPN + 1 PNP 100mA SOT-363 Single Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HT(Shenzhen Jinyu Semicon) | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 475 | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | 650mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Epitaxial Die Construction
- Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package
In-Stock: 2,740
2,740 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0263$ 0.0250 | $ 0.50 |
| 200+ | $ 0.0205$ 0.0195 | $ 3.90 |
| 600+ | $ 0.0173$ 0.0165 | $ 9.90 |
| 3,000+ | $ 0.0153$ 0.0146 | $ 43.80 |
| 9,000+ | $ 0.0137$ 0.0131 | $ 117.90 |
| 21,000+ | $ 0.0128$ 0.0122 | $ 256.20 |
| 39,000+ | $ 0.0126$ 0.0120 | $ 468.00 |
| 81,000+ | $ 0.0125$ 0.0119 | $ 963.90 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HT(Shenzhen Jinyu Semicon) | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 45V | |
| DC Current Gain | 475 | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| type | NPN+PNP | |
| Number | 1 NPN + 1 PNP | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | 650mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Epitaxial Die Construction
- Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
