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HUASHUO IRLML6402
| Manufacturer | HUASHUOAsian Brands |
| MPN | IRLML6402 |
| LCSC Part # | C518785 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 4.9A SOT-23 |
| Datasheet | HUASHUO IRLML6402 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 114pF | |
| Ciss-Input Capacitance | 1.2nF | |
| Pd - Power Dissipation | 1.31W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.9A | |
| Reverse Transfer Capacitance (Crss) | 151pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14.3nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 114pF | |
| Ciss-Input Capacitance | 1.2nF | |
| Pd - Power Dissipation | 1.31W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.9A | |
| Reverse Transfer Capacitance (Crss) | 151pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14.3nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The IRLML6402 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRLML6402 meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Super Low Gate Charge
- Green Device Available
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 3,880
3,880 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0609 | $ 0.61 |
| 100+ | $ 0.0491 | $ 4.91 |
| 300+ | $ 0.0432 | $ 12.96 |
| 3,000+ | $ 0.0348 | $ 104.40 |
| 6,000+ | $ 0.0312 | $ 187.20 |
| 9,000+ | $ 0.0295 | $ 265.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 114pF | |
| Ciss-Input Capacitance | 1.2nF | |
| Pd - Power Dissipation | 1.31W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.9A | |
| Reverse Transfer Capacitance (Crss) | 151pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14.3nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 114pF | |
| Ciss-Input Capacitance | 1.2nF | |
| Pd - Power Dissipation | 1.31W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.9A | |
| Reverse Transfer Capacitance (Crss) | 151pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14.3nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The IRLML6402 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRLML6402 meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Super Low Gate Charge
- Green Device Available
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
C518785 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |