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EDA-ModelleEasyEDA
VBsemi Elec SQ3426AEEV-T1_BE3-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | SQ3426AEEV-T1_BE3-VB |
| LCSC-Nr. | C51822594 |
| Verp. | TSOP-6 |
| Kundennummer | |
| Hauptmerkm. | 5W 60V 7A 30mΩ@10V 1 N-channel N-Channel TSOP-6 Single FETs, MOSFETs |
| Datenblatt | VBsemi Elec SQ3426AEEV-T1_BE3-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TSOP-6 | |
| Output Capacitance(Coss) | 85pF | |
| Ciss-Input Capacitance | 560pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 7.6nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TSOP-6 | |
| Output Capacitance(Coss) | 85pF | |
| Ciss-Input Capacitance | 560pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 7.6nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- TSOP-6 package
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TSOP-6 | |
| Output Capacitance(Coss) | 85pF | |
| Ciss-Input Capacitance | 560pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 7.6nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TSOP-6 | |
| Output Capacitance(Coss) | 85pF | |
| Ciss-Input Capacitance | 560pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 7.6nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
- TSOP-6 package
C51822594 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |