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onsemi MBRS130LT3GRoHS

Manufacturer
MPN
MBRS130LT3G
LCSC Part #
C51771
Packaging
SMB(DO-214AA)
Customer #
Key Attributes
DIODE SCHOTTKY 30V SMB(DO-214AA)
Datasheetpdf icononsemi MBRS130LT3G
In-Stock: 19,815
19,815 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1156$ 0.58
50+$ 0.0918$ 4.59
150+$ 0.0798$ 11.97
500+$ 0.0709$ 35.45
2,500+$ 0.0563$ 140.75
5,000+$ 0.0527$ 263.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingSMB(DO-214AA)
Diode Configuration1 Independent
Operating Junction Temperature Range-65℃~+125℃
Voltage - DC Reverse (Vr) (Max)30V
Voltage - Forward(Vf@If)445mV@2A
Reverse Leakage Current (Ir)1mA@30V
Non-Repetitive Peak Forward Surge Current40A
Current - Rectified2A

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Features

AI Translation
  • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, T_J = 25℃)
  • Small Compact Surface Mountable Package with J-Bend Leads
  • Highly Stable Oxide Passivated Junction
  • Guard-Ring for Stress Protection
  • ESD Ratings:
    • Human Body Model = 3B (> 16000 V)
    • Machine Model = C (> 400 V)
  • AEC-Q101 Qualified and PPAP Capable
  • SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free