BORN IRLML6401

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	BORN
Packaging	SOT-23-3L
Drain to Source Voltage	12V
Current - Continuous Drain(Id)	4.3A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	400mV
Pd - Power Dissipation	1.3W
Reverse Transfer Capacitance (Crss@Vds)	125pF
RDS(on)	85mΩ@2.5V
Number	1 P-Channel
Input Capacitance(Ciss)	830pF

AI Translation

Fast switching High Density Cell Design For Ultra Low On-Resistance SOT-23-3L for Surface Mount Package.

AI Translation

Low on-resistance:
- Maximum RDS(ON) of 50 mΩ at VGS = -4.5 V
- Maximum RDS(ON) of 85 mΩ at VGS = -2.5 V
Drain-source voltage: VDS = -12 V
Drain current: ID = -4.3 A

In-Stock: 2,180

2,180 In stock, ships now

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Qty	Unit Price	Total Amount
10+	$ 0.0567	$ 0.57
100+	$ 0.0458	$ 4.58
300+	$ 0.0403	$ 12.09
3,000+	$ 0.032	$ 96.00
6,000+	$ 0.0287	$ 172.20
9,000+	$ 0.027	$ 243.00
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	BORN
Packaging	SOT-23-3L
Drain to Source Voltage	12V
Current - Continuous Drain(Id)	4.3A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	400mV
Pd - Power Dissipation	1.3W
Reverse Transfer Capacitance (Crss@Vds)	125pF
RDS(on)	85mΩ@2.5V
Number	1 P-Channel
Input Capacitance(Ciss)	830pF

AI Translation

Fast switching High Density Cell Design For Ultra Low On-Resistance SOT-23-3L for Surface Mount Package.

AI Translation

Low on-resistance:
- Maximum RDS(ON) of 50 mΩ at VGS = -4.5 V
- Maximum RDS(ON) of 85 mΩ at VGS = -2.5 V
Drain-source voltage: VDS = -12 V
Drain current: ID = -4.3 A