- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
onsemi FDG6303N
| Manufacturer | |
| MPN | FDG6303N |
| LCSC Part # | C512895 |
| Packaging | SC-70-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 25V 0.5A SC-70-6 |
| Datasheet |  onsemi FDG6303N |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SC-70-6 | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 500mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 450mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | 2.3nC@5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These dual N-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
AI Translation
- 25 V, 0.50 A continuous, 1.5 A peak.
- RDS(ON)=0.45 Ω @ VGS=4.5 V
- RDS(ON)=0.60 Ω @ VGS=2.7 V
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.5V).
- Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
- Compact industry standard SC70-6 surface mount package.
- SuperSOT-8
- The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Applications
AI Translation
- DC/DC Converter
In-Stock: 5,480
5,480 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2369 | $ 1.18 |
| 50+ | $ 0.1857 | $ 9.29 |
| 150+ | $ 0.1637 | $ 24.56 |
| 500+ | $ 0.1364 | $ 68.20 |
| 3,000+ | $ 0.1242 | $ 372.60 |
| 6,000+ | $ 0.1169 | $ 701.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SC-70-6 | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 500mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 450mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | 2.3nC@5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These dual N-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
AI Translation
- 25 V, 0.50 A continuous, 1.5 A peak.
- RDS(ON)=0.45 Ω @ VGS=4.5 V
- RDS(ON)=0.60 Ω @ VGS=2.7 V
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.5V).
- Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
- Compact industry standard SC70-6 surface mount package.
- SuperSOT-8
- The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Applications
AI Translation
- DC/DC Converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |