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DIODES DMN10H170SFG-7RoHS

Manufacturer
DIODES
MPN
DMN10H170SFG-7
LCSC Part #
C5124985
Packaging
PowerDI3333-8
Customer #
Key Attributes
MOSFET N-CH 100V 2.9A PowerDI3333-8
Datasheetpdf iconDIODES DMN10H170SFG-7
In-Stock: 1,690
1,690 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2709$ 1.35
50+$ 0.2389$ 11.95
150+$ 0.2252$ 33.78
500+$ 0.2081$ 104.05
2,000+$ 0.2005$ 401.00
4,000+$ 0.1959$ 783.60
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingPowerDI3333-8
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation940mW
Reverse Transfer Capacitance (Crss@Vds)24.6pF
RDS(on)122mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)870.7pF
Gate Charge(Qg)14.9nC
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

AI Translation
  • 100% Unclamped Inductive Switch (UIS) test in production
  • Low RDS(ON) – ensures on state losses are minimized
  • Small form factor thermally efficient package enables higher density end products
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Applications

AI Translation
  • Backlighting
  • Power Management Functions
  • DC-DC Converters