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BOYAMICRO BY25Q32ESHIG(R)RoHS

Manufacturer
BOYAMICROAsian Brands
MPN
BY25Q32ESHIG(R)
LCSC Part #
C50176326
Packaging
DFN-8(3x4)
Customer #
Key Attributes
32Mbit 2.7V~3.6V 120MHz SPI DFN-8(3x4) Memory (ICs) RoHS
Datasheetpdf iconBOYAMICRO BY25Q32ESHIG(R)
In-Stock: 37
37 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.3524$ 0.35
10+$ 0.3459$ 3.46
30+$ 0.341$ 10.23
100+$ 0.3362$ 33.62
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerBOYAMICRO
PackagingDFN-8(3x4)
Memory Size32Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency120MHz
FeaturesWrite enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)180ms@(64KB)
Page Programming Time (Tpp)450us
InterfaceSPI
Standby Supply Current2uA

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The BY25Q32ES is a 32M-bit Serial Peripheral Interface Flash memory supporting Dual/Quad SPI: Serial Clock, Chip Select, and Serial Data I/O0, I/O1, I/O2, and I/O3. Dual I/O data transfer speeds reach up to 216Mbps, while Quad I/O and Quad Output data transfer speeds reach up to 432Mbps. The device operates from a single low-voltage supply with a voltage range of 2.7V to 3.6V. Additionally, the device supports JEDEC-standard Manufacturer and Device ID, as well as three 1024-byte Security Registers.

Features

AI Translation
  • Serial peripheral interface: Standard SPI, Dual SPI, Quad SPI
  • Read: Normal Read (serial) clock rate 100MHz; Fast Read (serial) clock rate 120MHz; Dual I/O data transfer rate up to 240Mbps; Quad I/O data transfer rate up to 480Mbps; Execute-In-Place (XIP) support; continuous read with 8/16/32/64-byte wrap
  • Program: Serial input page program, up to 256 bytes
  • Erase: Block Erase (64/32 KB), Sector Erase (4 KB), Chip Erase, Erase Suspend & Resume
  • Program/Erase speed: Page program time typical 0.45ms; Sector erase time typical 35ms; Block erase time typical 0.10/0.18s; Chip erase time typical 11s
  • Flexible architecture: 4K-byte sectors; 32/64K-byte blocks
  • Low power: Max operating current 10mA; Max power-down current 2μA
  • Software/Hardware write protection: Three 1024-byte security registers with OTP lock; Discoverable parameter registers; Protection enable/disable via write-protect pin; Software write protection for all/partial memory; Top or bottom, sector or block selection support
  • Single supply voltage: Full voltage range 2.7V~3.6V
  • Temperature range: Commercial -40°C~+85°C; Industrial -40°C~+85°C; Industrial -40°C~+105°C; Industrial -40°C~+125°C
  • Endurance/Data retention: Typical 100,000 program-erase cycles per sector; Typical 20-year data retention