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ST STPSC20065W

Manufacturer
MPN
STPSC20065W
LCSC Part #
C501057
Packaging
DO-247
Customer #
Key Attributes
Standalone 650V 1.3V@20A 20A DO-247 Single Diodes RoHS
Datasheetpdf iconST STPSC20065W
RoHS Compliance3 documents available
Alternative Parts1
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QtyUnit Price(Reference Only)Total Amount
1+$ 6.031$ 6.03
10+$ 5.2598$ 52.60
30+$ 4.7893$ 143.68
100+$ 4.396$ 439.60
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerST
PackagingDO-247
Operating Junction Temperature Range-40℃~+175℃
Diode ConfigurationStandalone
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.3V@20A
Reverse Leakage Current (Ir)30uA@650V
Non-Repetitive Peak Forward Surge Current90A
Current - Rectified20A

Introduction

AI Translation

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn - off and ringing patterns are negligible. The minimal capacitive turn - off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Features

AI Translation
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • Insulated package TO - 220AC ins: Insulated voltage: 2500 V rms Typical package capacitance: 7 pF
  • High forward surge capability
  • ECOPACK 02 compliant component
  • Maximum operating: Tj 175 °C

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
STPSC20H12WLSTDO-247-20$ 12.9412