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Infineon IRF9Z34NPBF
| Manufacturer | |
| MPN | IRF9Z34NPBF |
| LCSC Part # | C500523 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET P-CH 55V 19A TO-220AB |
| Datasheet |  Infineon IRF9Z34NPBF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 19A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 68W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 620pF | |
| Gate Charge(Qg) | 35nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3117 | $ 1.56 |
| 50+ | $ 0.2536 | $ 12.68 |
| 150+ | $ 0.2236 | $ 33.54 |
| 500+ | $ 0.1862 | $ 93.10 |
| 2,700+ | $ 0.1696 | $ 457.92 |
| 5,400+ | $ 0.1596 | $ 861.84 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 19A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 68W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 620pF | |
| Gate Charge(Qg) | 35nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |